Fully electrically read-write device out of a ferromagnetic semiconductor

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.Comment: 4 pages, 4 figure

A class of quadratic deformations of Lie superalgebras

We study certain Z_2-graded, finite-dimensional polynomial algebras of degree 2 which are a special class of deformations of Lie superalgebras, which we call quadratic Lie superalgebras. Starting from the formal definition, we discuss the generalised Jacobi relations in the context of the Koszul property, and give a proof of the PBW basis theorem. We give several concrete examples of quadratic Lie superalgebras for low dimensional cases, and discuss aspects of their structure constants for the `type I' class. We derive the equivalent of the Kac module construction for typical and atypical modules, and a related direct construction of irreducible modules due to Gould. We investigate in detail one specific case, the quadratic generalisation gl_2(n/1) of the Lie superalgebra sl(n/1). We formulate the general atypicality conditions at level 1, and present an analysis of zero-and one-step atypical modules for a certain family of Kac modules.Comment: 26pp, LaTeX. Original title: "Finite dimensional quadratic Lie superalgebras"; abstract re-worded; text clarified; 3 references added; rearrangement of minor appendices into text; new subsection 4.

Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor

A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.Comment: 3 figures, submitted for publicatio